To find out the effective slurry with suitable type of oxidizer and concentration , chemical etching experiment was applied to the litao3 wafer . the chemical etching effects were analysed by measuring etching rate and x - ray spectrum 采用化學(xué)腐蝕實(shí)驗方法研究拋光液中氧化劑種類和濃度以及拋光液ph值對鉭酸鋰晶片化學(xué)去除的影響。
Theoretical analysis and experimental results show that the mentioned methods above can simplify the process condition , improve the etched effect , shorten the etching time and obtain more even etched surface . 2 ) laser - assisted wet sequencially - selective - etching method has been developed this method can be applied when the corrosion solution is mixed solvent 2 )提出了激光化學(xué)誘導(dǎo)液相次序選擇腐蝕法該方法適用于腐蝕液為混合溶劑的情況,例如, h2so4 - h2o2對gaas基片進(jìn)行腐蝕時,先采用h2o2對基片進(jìn)行氧化腐蝕處理,再利用h2so4進(jìn)行激光化學(xué)腐蝕。